Synergistic Effects of Nitrogen–Oxygen–Nitrogen, Forming Gas–Oxygen–Forming Gas, and Argon–Oxygen–Argon Annealing Ambient on the Structural and Electrical Characteristics of Thulium Oxide Passivation Layers on Silicon Substrate

A comprehensive probe was conducted to compare the impact of postdeposition annealing at 700°C in different ambient of nitrogen–oxygen–nitrogen (NON), forming gas–oxygen–forming gas (FGOFG), and argon–oxygen–argon (ArOAr) on the passivating characteristics of thulium oxide (Tm 2 O 3 ) on the silicon (Si) substrate. The nitrogen ions have been incorporated in Tm 2 O 3 passivation layers after annealing in NON and FGOFG ambient, of which NON ambient has impeded the growth of silicon oxide (SiO 2 ) interfacial layer (3.258 nm). Although a thicker SiO 2 interfacial layer (4.026 nm) was formed after annealing in FGOFG ambient, the attainment of the highest k value (16.8) indicated that the existence of hydrogen ions has assisted the improvement in the overall…