Enhancing the open circuit voltage of the SnS based heterojunction solar cell using NiO HTL

In this article, the numerical investigations on a novel (ITO/CeO2/SnS/NiO/Mo) heterostructure of the SnS-based solar cell have been presented using SCAPS-1D simulation software. The main objective of the study was the exploration of the effect of NiO hole transport layer (HTL) on the performance of the proposed SnS-based heterojunction solar cell. The open circuit voltage of the proposed cell has been enhanced up to 345 mV after using NiO HTL which indicates a significant reduction of surface recombination velocity at SnS/electrode interface. Around 12.78% efficiency enhancement was observed after using NiO HTL in the SnS-based heterojunction solar cell, and an efficiency of 25.1% could be obtained from the proposed heterojunction solar cell. It was found that the cell performance depended…