Journal ArticleOpen Access
Optical and Transport Properties of p-Type GaAs
Author Affiliations
University of Dhaka, Bhabha Atomic Research Centre, Atomic Energy (Canada)
Published InJournal of Bangladesh Academy of Sciences
Year2012
Citations17
Abstract
Electrical properties such as electrical resistivity, Hall coefficient, Hall mobility, carrier concentration of p-type GaAs samples were studied at room temperature (300 K). Resistivity was found to be of the order of 5.6 × 10-3?-cm. The Hall coefficient (RH) was calculated to be 7.69 × 10-1cm3/C and Hall mobility (?H) was found to be 131cm2/V-s at room temperature from Hall effect measurements. Carrier concentration was estimated to be 8.12 × 1018/cm3 and the Fermi level was calculated directly from carrier density data which was 0.33 eV. Photoconductivity measurements were carried on by varying sample current, light intensity and temperature at constant chopping frequency 45.60 Hz in all the cases mentioned above. It was observed that within the range of sample…
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Fields & Keywords
Physical SciencesPhysics and AstronomyAtomic and Molecular Physics, and OpticsSurface and Thin Film PhenomenaAdvanced Semiconductor Detectors and MaterialsSemiconductor Quantum Structures and DevicesCondensed matter physicsOpticsOptoelectronicsThermodynamicsComposite materialChromatographyQuantum mechanics