Terminal Atom‐Controlled Etching of 2D‐TMDs

Abstract The controlled etching of 2D transition metal dichalcogenides (2D‐TMDs) is critical to understanding the growth mechanisms of 2D materials and patterning 2D materials but remains a major comprehensive challenge. Here, a rational strategy to control the terminal atoms of 2D‐TMDs etched holes is reported. Using laser irradiation combined with an improved anisotropic thermal etching process under a determined atmosphere, terminal atom‐controlled etched hole arrays are created on 2D‐TMDs. By adjusting the gas atmosphere during the thermal etching stage, triangular etched hole arrays terminated by the tungsten zigzag (W‐ZZ) edge (in an Ar/H 2 atmosphere), hexagonal etched hole arrays terminated alternately by the W‐ZZ edge and sulfur (selenium) zigzag (S‐ZZ or Se‐ZZ) edge (in a pure Ar atmosphere), and triangular…