Bing Ji, Xueguan Song, Cao Wenping, Volker Pickert et al.
This paper proposes an in situ diagnostic and prognostic (D&P) technology to monitor the health condition of insulated gate bipolar transistors (IGBTs) used in EVs with a focus on the IGBTs' solder layer fatigue. IGBTs' thermal impedance and the junction temperature can be used as health indicators ...
Bing Ji, Xueguan Song, Edward Sciberras, Wenping Cao et al.
Insulated-gate bipolar transistor (IGBT) power modules find widespread use in numerous power conversion applications where their reliability is of significant concern. Standard IGBT modules are fabricated for general-purpose applications while little has been designed for bespoke applications. Howev...
Md. Mahabub Alam Moon, Md. Hasan Ali, Md. Ferdous Rahman, Abdul Kuddus et al.
In this article, semiconducting Barium Silicide (BaSi2) absorber based novel heterostructure thin-film solar cell (TFSC) has been studied in details. The solar cell has been numerically simulated and intensely analyzed by Solar cell Capacitance Simulator (SCAPS). Layer thickness was varied from 100 ...
Mohammad Ziaur Rahman, Shahidul Islam Khan
In order to avoid an unacceptably large efficiency loss when moving towards thinner silicon materials, the near-term challenge in the c-Si PV industry is to implement an effective passivation method for both cell surfaces. This paper discussed several suitable passivation schemes available. While th...
Wayesh Qarony, Mohammad I. Hossain, M. Khalid Hossain, M. Jalal Uddin et al.
Hydrogenated amorphous silicon (a-Si:H) has been effectively utilized as photoactive and doped layers for quite a while in thin-film solar applications but its energy conversion efficiency is limited due to thinner absorbing layer and light degradation issue. To overcome such confinements, it is exp...
Mohammad Khairul Basher, M. Khalid Hossain, Md. Abdur Rafiq Akand
This paper presents the effect of surface texturization on the minority carrier lifetime and photoelectric conversion parameters of monocrystalline silicon solar cell. Two different wet-chemical texturization methods were employed to etch the monocrystalline silicon wafer surface. Morphology of the ...
Mohammad Ismail Hossain, Wayesh Qarony, M. Khalid Hossain, Mithun Debnath et al.
In thin-film solar cells, the photocurrent conversion productivity can be distinctly boosted-up utilizing a proper back reflector. Herein, the impact of different smooth and textured back reflectors was explored and effectuated to study the optical phenomena with interface engineering strategies and...
Galib Hashmi, Abdur Rafique Akand, Mahbubul Hoq, Habibur Rahman
Jaker Hossain, Md. Mahabub Alam Moon, Bipanko Kumar Mondal, Mohammad A. Halim
In spite of having higher carrier mobilities and absorption coefficients of germanium (Ge) than those of silicon (Si), there has been less focus on Ge-based solar cells due to the low bandgap and high-cost of Ge wafer as well as requirement of its high-purity level. Currently, availability of high-p...
Mohammad Ziaur Rahman
Galib Hashmi, Mohammad Junaebur Rashid, Zahid Hasan Mahmood, Mahbubul Hoq et al.
In this work, the impact of six different anti-reflection coating (ARC) layers has been investigated using PC1D simulation software. Simulation shows that the range of 500–700 nm would be suitable for designing an ARC. Designing a single-layer silicon nitride (Si3N4) ARC for 600 nm wavelength and wi...
Jaker Hossain
Abstract This article demonstrates the novel designs of Si and GaAs wafer-based double-heterojunction (DH) solar cells using SCAPS-1D simulator. Simple five-layer solar cells are proposed here: cells comprised of a cathode metal layer, three layers of semiconductor materials in the III–V, II–VI and ...
Jewel Kumer Saha, Ravindra Naik Bukke, Narendra Naik Mude, Jin Jang
We report the impact of yttrium oxide (YOx) passivation on the zinc oxide (ZnO) thin film transistor (TFT) based on Al2O3 gate insulator (GI). The YOx and ZnO films are both deposited by spray pyrolysis at 400 and 350 °C, respectively. The YOx passivated ZnO TFT exhibits high device performance of f...
Jaker Hossain, Mahbubur Rahman, Md. Mahabub Alam Moon, Bipanko Kumar Mondal et al.
Abstract We report the simulation outcomes of a highly efficient CuI/n-Si heterojunction solar cell (HJSC) by SCAPS-1D simulator using the parameters obtained from spin-coated CuI thin film characterizations. The influence of thickness and doping concentration of Si substrate as well as CuI hole tra...
Abidur Rahaman, Han-Sol Jeong, Jin Jang
A high-performance CMOS operational amplifier (op-amp) has been demonstrated with the low-temperature poly-Si oxide (LTPO) thin-film transistors (TFTs). The p-type TFT exhibits the maximum field-effect mobility of 80 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.o...