Mengyang Yuan, John Niroula, Qingyun Xie, Nitul S. Rajput et al.
This letter reports an enhancement-mode (E-mode) GaN transistor technology which has been demonstrated to operate in a simulated Venus environment (460 °C, ~ 92 atm., containing CO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /N <sub xmlns:mm...
Mengyang Yuan, Qingyun Xie, Kai Fu, Toiyob Hossain et al.
A study of GaN for high temperature (HT, up to 500 °C) digital circuits was conducted. A HT-robust GaN-on-Si technology based on enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) and depletion-mode AlGaN/GaN HEMTs was proposed and used to implement different digital ci...
Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder et al.
This article reports on the scaling of GaN complementary technology (CT) on a silicon substrate to push its performance limits for circuit-level applications. The highly scaled self-aligned (SA) p-channel FinFET (a fin width of 20 nm) achieved an <inline-formula xmlns:mml="http://www.w3.org/1998/Mat...
John Niroula, Qingyun Xie, Nitul S. Rajput, Patrick K. Darmawi-Iskandar et al.
This Letter reports the stability of regrown and alloyed Ohmic contacts to AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) for high temperature applications up to 500 °C. Transfer length method (TLM) measurements from 25 to 500 °C in air show that the regrown contacts appear to be stable ...
Mengyang Yuan, Qingyun Xie, John Niroula, Mohamed Fadil Isamotu et al.
This paper reports on the high temperature (HT) robustness of enhancement-mode (E-mode) p-GaN-gated Al-GaN/GaN high electron mobility transistors (HEMTs), with an emphasis on the key transistor-level parameters for digital and analog mixed-signal applications. In-situ measurements from room temperat...
Mengyang Yuan, Qingyun Xie, John Niroula, Nadim Chowdhury et al.
The most commonly used memory cells, namely a 32-bit <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times10$ </tex-math></inline-formula> -bit read-only memory, a 1-bit 4-transistor static random-access memory, ...
Qingyun Xie, John Niroula, Nitul S. Rajput, Mengyang Yuan et al.
This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated ...
Qingyun Xie, Mengyang Yuan, John Niroula, James A. Greer et al.
This paper reports on the scaling of self-aligned GaN complementary technology on a GaN-on-Si platform to push its performance limits for circuit-level applications. The highly scaled self-aligned p-channel FinFET (fin width =20 nm) achieved $I_{D,max}$ of -300 mA/mm and R <inf xmlns:mml="http://www...
Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder et al.
This article reports advances in high temperature (HT) GaNon-Si technology by taking pioneering steps towards design technology co-optimization (DTCO). A computer-aided design (CAD) framework was established and experimentally validated up to $500 ^{\circ}\mathrm{C}$, the highest temperature achieve...
Bejoy Sikder, Toiyob Hossain, Qingyun Xie, John Niroula et al.
This Letter reports an investigation of hole transport in p-GaN/AlGaN/GaN heterostructures through experimental and theoretical analyses under varied conditions. Highly non-linear current–voltage (I–V) characteristics, obtained via the linear transmission line method measurements, are utilized for t...