Results for “"Mengyang Yuan"”

Mengyang Yuan, Qingyun Xie, Kai Fu, Toiyob Hossain et al.

A study of GaN for high temperature (HT, up to 500 °C) digital circuits was conducted. A HT-robust GaN-on-Si technology based on enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) and depletion-mode AlGaN/GaN HEMTs was proposed and used to implement different digital ci...

Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder et al.

This article reports on the scaling of GaN complementary technology (CT) on a silicon substrate to push its performance limits for circuit-level applications. The highly scaled self-aligned (SA) p-channel FinFET (a fin width of 20 nm) achieved an <inline-formula xmlns:mml="http://www.w3.org/1998/Mat...

John Niroula, Qingyun Xie, Nitul S. Rajput, Patrick K. Darmawi-Iskandar et al.

This Letter reports the stability of regrown and alloyed Ohmic contacts to AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) for high temperature applications up to 500 °C. Transfer length method (TLM) measurements from 25 to 500 °C in air show that the regrown contacts appear to be stable ...

Mengyang Yuan, Qingyun Xie, John Niroula, Mohamed Fadil Isamotu et al.

This paper reports on the high temperature (HT) robustness of enhancement-mode (E-mode) p-GaN-gated Al-GaN/GaN high electron mobility transistors (HEMTs), with an emphasis on the key transistor-level parameters for digital and analog mixed-signal applications. In-situ measurements from room temperat...

Mengyang Yuan, Qingyun Xie, John Niroula, Nadim Chowdhury et al.

The most commonly used memory cells, namely a 32-bit <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times10$ </tex-math></inline-formula> -bit read-only memory, a 1-bit 4-transistor static random-access memory, ...

Qingyun Xie, John Niroula, Nitul S. Rajput, Mengyang Yuan et al.

This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated ...

Qingyun Xie, Mengyang Yuan, John Niroula, James A. Greer et al.

This paper reports on the scaling of self-aligned GaN complementary technology on a GaN-on-Si platform to push its performance limits for circuit-level applications. The highly scaled self-aligned p-channel FinFET (fin width =20 nm) achieved $I_{D,max}$ of -300 mA/mm and R <inf xmlns:mml="http://www...

Md. Tasnim Azad, Toiyob Hossain, Bejoy Sikder, Qingyun Xie et al.

This work proposes a multimetal gated (MMG) architecture to improve the linearity of AlGaN/GaN high-electron-mobility transistor (HEMT). The general idea of this architecture is to use different gate metals along the width of the device. Through experimentally calibrated technology computer-aided de...

Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder et al.

This article reports advances in high temperature (HT) GaNon-Si technology by taking pioneering steps towards design technology co-optimization (DTCO). A computer-aided design (CAD) framework was established and experimentally validated up to $500 ^{\circ}\mathrm{C}$, the highest temperature achieve...

Yu Mao, Mengyang Wang, Yuanyuan Huang, Yanmei Deng et al.

Toiyob Hossain, Tanvir Hossain, A. K. M. Anindya Alam, Bejoy Sikder et al.

In this work, a system-technology co-optimization (STCO) of the AlGaN/GaN multimetal gated (MMG) HEMT architecture for third-order transconductance (gm3) engineering and linearity improvement in the presence of fermi-level pinning (FLP) is reported. Through technology computer-aided design (TCAD), c...

Toiyob Hossain, Bejoy Sikder, Md. Tasnim Azad, Qingyun Xie et al.

This work investigates the robustness of AlGaN/GaN multimetal gated (MMG) HEMT architecture for third-order transconductance (g<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m3</inf>) optimization and linearity improvement in the presence of Fermi-Leve...

Prithu Mahmud, Qingyun Xie, Mengyang Yuan, Tomás Palacios et al.

Abstract GaN devices show improved performance in high-temperature analog and power electronic applications. However, a high-temperature all-GaN chip is challenging because of the limited availability of all-GaN system components that can operate at extreme temperatures. This paper presents the desi...

Ayan Biswas Pranta, Abdullah Jubair Bin Iqbal, Bejoy Sikder, Qingyun Xie et al.

Abstract This paper reports an effective way of improving the linearity of AlGaN/GaN high electron mobility transistors (HEMTs) by modulating the AlGaN barrier thickness under the gate electrode along its width. This produces an offset in the local equivalent threshold voltage ( <mml:math xmlns:mml=...