Mengyang Yuan, John Niroula, Qingyun Xie, Nitul S. Rajput et al.
This letter reports an enhancement-mode (E-mode) GaN transistor technology which has been demonstrated to operate in a simulated Venus environment (460 °C, ~ 92 atm., containing CO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /N <sub xmlns:mm...
Siyan Meng, Xiaoxu Liu, Shiqi Zhu, Peng Xie et al.
LINE-1s are the major clade of retrotransposons with autonomous retrotransposition activity. Despite the potential genotoxicity, LINE-1s are highly activated in early embryos. Here we show that a subset of young LINE-1s, L1Md_Ts, are marked by the RNA polymerase II elongation factor ELL3, and functi...
Mengyang Yuan, Qingyun Xie, Kai Fu, Toiyob Hossain et al.
A study of GaN for high temperature (HT, up to 500 °C) digital circuits was conducted. A HT-robust GaN-on-Si technology based on enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) and depletion-mode AlGaN/GaN HEMTs was proposed and used to implement different digital ci...
Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder et al.
This article reports on the scaling of GaN complementary technology (CT) on a silicon substrate to push its performance limits for circuit-level applications. The highly scaled self-aligned (SA) p-channel FinFET (a fin width of 20 nm) achieved an <inline-formula xmlns:mml="http://www.w3.org/1998/Mat...
John Niroula, Qingyun Xie, Nitul S. Rajput, Patrick K. Darmawi-Iskandar et al.
This Letter reports the stability of regrown and alloyed Ohmic contacts to AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) for high temperature applications up to 500 °C. Transfer length method (TLM) measurements from 25 to 500 °C in air show that the regrown contacts appear to be stable ...
Mengyang Yuan, Qingyun Xie, John Niroula, Mohamed Fadil Isamotu et al.
This paper reports on the high temperature (HT) robustness of enhancement-mode (E-mode) p-GaN-gated Al-GaN/GaN high electron mobility transistors (HEMTs), with an emphasis on the key transistor-level parameters for digital and analog mixed-signal applications. In-situ measurements from room temperat...
Mengyang Yuan, Qingyun Xie, John Niroula, Nadim Chowdhury et al.
The most commonly used memory cells, namely a 32-bit <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times10$ </tex-math></inline-formula> -bit read-only memory, a 1-bit 4-transistor static random-access memory, ...
Qingyun Xie, John Niroula, Nitul S. Rajput, Mengyang Yuan et al.
This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated ...
Qingyun Xie, Mengyang Yuan, John Niroula, James A. Greer et al.
This paper reports on the scaling of self-aligned GaN complementary technology on a GaN-on-Si platform to push its performance limits for circuit-level applications. The highly scaled self-aligned p-channel FinFET (fin width =20 nm) achieved $I_{D,max}$ of -300 mA/mm and R <inf xmlns:mml="http://www...
Md. Tasnim Azad, Toiyob Hossain, Bejoy Sikder, Qingyun Xie et al.
This work proposes a multimetal gated (MMG) architecture to improve the linearity of AlGaN/GaN high-electron-mobility transistor (HEMT). The general idea of this architecture is to use different gate metals along the width of the device. Through experimentally calibrated technology computer-aided de...
Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder et al.
This article reports advances in high temperature (HT) GaNon-Si technology by taking pioneering steps towards design technology co-optimization (DTCO). A computer-aided design (CAD) framework was established and experimentally validated up to $500 ^{\circ}\mathrm{C}$, the highest temperature achieve...
Pengxu JIANG, Yue Xie, Cairong Zou, Li Zhao et al.
In human-computer interaction, acoustic scene classification (ASC) is one of the relevant research domains. In real life, the recorded audio may include a lot of noise and quiet clips, making it hard for earlier ASC-based research to isolate the crucial scene information in sound. Furthermore, scene...
Pengxu JIANG, Yang Yang, Yue Xie, Cairong Zou et al.
Convolutional neural network (CNN) is widely used in acoustic scene classification (ASC) tasks. In most cases, local convolution is utilized to gather time-frequency information between spectrum nodes. It is challenging to adequately express the non-local link between frequency domains in a finite c...
Toiyob Hossain, Tanvir Hossain, A. K. M. Anindya Alam, Bejoy Sikder et al.
In this work, a system-technology co-optimization (STCO) of the AlGaN/GaN multimetal gated (MMG) HEMT architecture for third-order transconductance (gm3) engineering and linearity improvement in the presence of fermi-level pinning (FLP) is reported. Through technology computer-aided design (TCAD), c...
Bejoy Sikder, Toiyob Hossain, Qingyun Xie, John Niroula et al.
This Letter reports an investigation of hole transport in p-GaN/AlGaN/GaN heterostructures through experimental and theoretical analyses under varied conditions. Highly non-linear current–voltage (I–V) characteristics, obtained via the linear transmission line method measurements, are utilized for t...
Toiyob Hossain, Bejoy Sikder, Md. Tasnim Azad, Qingyun Xie et al.
This work investigates the robustness of AlGaN/GaN multimetal gated (MMG) HEMT architecture for third-order transconductance (g<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m3</inf>) optimization and linearity improvement in the presence of Fermi-Leve...
Jiaying Liu, Qingyun Chu, Renjie Li, Y Zhang et al.
-acryloyl phenylalanine and hydroxyethyl acrylamide. Acid-induced protonation followed by hydrolysis of the β-carboxylic amide drives a pH-triggered quadruple evolution of intermolecular interactions from electrostatic repulsion to hydrophobicity-assisted hydrogen bonding, then to hydrophobicity-ass...
Tanvir Hossain, A. K. M. Anindya Alam, Qingyun Xie, Hiroshi Amano et al.
This work reports on the dynamics of hole transport in a p-GaN/UID-GaN/AlGaN/GaN heterostructure investigated through temperature-dependent I–V characteristics. The pronounced temperature and bias dependence of the sheet resistance reveal that bulk p-GaN dominates hole transport at higher bias. Arrh...
Mamun Abdullah Al, Yu-Zhen Ming, Dandan Zhang, Fangjuan Huang et al.
Mengru Xiong, Xiaoting Xu, Linlin Hu, Jie He et al.
Background The area under the concentration-time curve over 24 hours (AUC 0-24h ) is a critical pharmacokinetic parameter influencing the clinical efficacy of polymyxin B (PMB). However, due to substantial population heterogeneity among critically ill patients, the correlation between the AUC 0-24h ...